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Si5499DC
Vishay Siliconix
P-Channel 1.5-V (G-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
-8
R DS(on) ( Ω )
0.036 at V GS = - 4.5 V
0.045 at V GS = - 2.5 V
0.056 at V GS = - 1.8 V
0.077 at V GS = - 1.5 V
I D (A) e
-6
-6
-6
-6
Q g (Typ.)
14 nC
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET: 1.5 V Rated
? Ultra-Low On-Resistance
APPLICATIONS
? Load Switch for Portable Devices
- Guaranteed Operation at V GS = 1.5 V Critical for
1206-8 ChipFET ?
Optimized Design and Longer Battery Life
1
S
D
D
D
D
D
Marking Code
G
D
G
BP
XXX
Lot Traceability
S
Bottom View
Part #
Code
and Date Code
D
Ordering Information: Si5499DC-T1-E3 (Lead (Pb)-free)
Si5499DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
-8
±5
- 6 e
Unit
V
Continuous Drain Current (T J = 150 °C) a, b
Pulsed Drain Current (10 μs Pulse Width)
Continuous Source-Drain Diode Current a, b
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
- 6 e
- 6 a, b, e
- 5.6 a, b
- 25
- 5.2
- 2.1 a, b
6.2
A
Maximum Power Dissipation a, b
T C = 70 °C
T A = 25 °C
P D
4
2.5 a, b
W
T A = 70 °C
1.6 a, b
Soldering Recommendations (Peak Temperature)
Operating Junction and Storage Temperature Range
c, d
T J , T stg
- 55 to 150
260
°C
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. See Solder Profile ( www.vishay.com/ppg?73257 ). The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 73321
S-83054-Rev. C, 29-Dec-08
www.vishay.com
1
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